m Contributors of LTwiki will replace this text with their entries.) Zname nD nG nS Mname
If ACMAG is omitted following the keyword AC, a value of unity is assumed.
Value is the resistance (in ohms) and may be positive or negative but not zero.
The model being called will have additional parameters already specified. of length and width cross term for width offset
n+ is the positive node, and n- is the negative node.
Vnameis the name of a voltage source through which the controlling current flows. 2.5E-6
SPICE model The SPICE model of a bipolar transistor includes a variety of parasitic circuit elements and some process related parameters in addition to the elements previously discussed in this chapter.
Flicker noise parameter
L dependent coefficient of the DIBL effect in output resistance
Drain-bias coefficient of CDSC
Value is the transresistance (in ohms).
Nodes n+ and n- are the nodes between which the switch terminals are connected.
Bulk charge effect coeff. 1E-4
next["dsbl"] = "wwhgifs/nextdsbl.gif";
Power of length dependence for length offset
Spice Models / S-parameters Coilcraft has measurement-based lumped element, netlist, and s-parameter models for reliable simulations.
n+ and n- are the positive and negative element nodes, respectively. -
Constant term for the short channel model
Second output resistance DIBL effect
Spice Models Request Form. EM
If I is given then the device is a current source, and if V is given the device is a voltage source. Mname is the model name, LEN is the length of the RC line in meters. DISTOF1 and DISTOF2 are the keywords that specify that the independent source has distortion inputs at the frequencies F1 and F2 respectively (see the description of the .DISTO control line).
The DC characteristics of the diode are determined by the parameters IS, N, and the ohmic resistance RS. V
Vname n+ n- DC/TRAN VALUE> >> >> >>, VCC 10 0 DC 6 Vin 13 2 0.001 AC 1 SIN(0 1 1MEG). As we have seen previously, we can easily change the parameters of these “bare-bones” models so that our circuits 1.0
Vname is the name of a voltage source through which the controlling current flows.
Value is the current gain.
nD, nG, nS, and nB are the drain, gate, source, and bulk (substrate) nodes, respectively.
Channel length modulation coefficient
Gate bias effect coefficient of RDSW
Narrow width parameter
Temperature coefficient for CJ
new thermal noise / BSIM3 flicker noise, Table 39 User Definable Parameters
Gate-drain overlap capacitance per unit W
If ACPHASE is omitted, a value of zero is assumed.
Parasitic resistance per unit width
Mname ND NG NS NB MNAME . 1
Simplifications are made to speed simulation time, and various performance parameters are adjusted to match the model to measured device performance.
n+ and n- are the positive and negative nodes, respectively. Parameter for smoothness of effective Vds calculation
The National Instrument SPICE Simulation Fundamentals series is your free resource on the internet for learning about circuit simulation. CJ
The BJT model is used to develop BiCMOS, TTL, and ECL circuits. Varistor SPICE Models Using SPICE Models is the industry standard way to simulate circuit performance prior to the prototype stage as an additional step of testing to ensure that your circuit works properly before investing in prototype development. VALUE is the transconductance (in mhos). 4. Value
Rname n1 n2 . 0.0086
Lname1 and Lname2 are the names of the two coupled inductors, and VALUE is the coefficient of coupling, K, which must be greater than 0 and less than or equal to 1.
n+ is the positive node, and n- is the negative node.
nc+ and nc- are the positive and negative controlling nodes, respectively. 0.0
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Subthreshold swing factor
1/K, Table 36 Flicker Noise Model Parameters
of length dependence for width offset
0, Table 35 Temperature Modeling Parameters
nc+ and nc- are the positive and negative controlling nodes, respectively.
n+ and n- are the positive and negative nodes, respectively.
nD, nG, and nS are the drain, gate, and source nodes, respectively. Note that voltage sources need not be grounded. PRWB
next["out"] = "wwhgifs/nextout.gif";
Non quasi static model
Source/drain gate side junction built-in potential
Gate-bias coefficient of Abulk
Iname n+ n- < DC/TRAN VALUE> >> >> >>, Igain 12 15 DC 1 Irc 23 21 0.333 AC 5 SFFM(0 1 1K). LWL
V, Table 34 Process Related Parameters
Length offset fitting parameter from C-V
Power of width dependence for length offset
This means that the model will mimic the op amp functionality, but will not have any transistor or any other semiconductor SPICE models. The other model available is the standard Berkeley SPICE semiconductor diode but extended to handle more detailed …
If the source value is time-invariant (e.g., a power supply), then the value may optionally be preceded by the letters DC. Description
If left unspecified, the default SPICE parameter values will be used. resistance between bulk connection point and drain
Body-bias coefficient of narrow-channel effect on VTH
Noise parameter C
Source/drain gate side junction cap. Table below lists the model parameters for some selected diodes.
A SPICE model is a text-description of a circuit component used by the SPICE Simulator to mathematically predict the behavior of that part under varying conditions.
Commercial and industrial SPICE simulators have added many other device models as technology advanced and earlier models became inadequate.
distance between gate stripes